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Width: 4.83 mm
Height: 16.51 mm
Length: 10.67 mm
Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 140 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, + 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Continuous Collector Current Ic Max: 24 A
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 24 A
