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Width: 5.31 mm
Height: 20.7 mm
Length: 15.87 mm
Fall Time: 74 ns
Rise Time: 105 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 161 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 520 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 41 ns
Typical Turn-Off Delay Time: 64 ns
Id - Continuous Drain Current: 130 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 150 S
Rds On - Drain-Source Resistance: 9.7 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
