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Width: 5 mm
Height: 0.9 mm
Length: 6 mm
Fall Time: 15 ns, 65 ns
Rise Time: 61 ns, 98 ns
Technology: Si
Unit Weight: 122.136 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 15 nC, 47 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 31 W, 50 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns, 16 ns
Typical Turn-Off Delay Time: 13 ns, 26 ns
Id - Continuous Drain Current: 64 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 131 S, 164 S
Rds On - Drain-Source Resistance: 3.2 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
