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Width: 3.9 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 260 ns
Rise Time: 8.6 ns
Technology: Si
Unit Weight: 540 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 57 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 9.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 25 S
Rds On - Drain-Source Resistance: 17 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
