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Width: 5.05 mm
Height: 0.7 mm
Length: 6.35 mm
Fall Time: 13 ns
Rise Time: 22 ns
Technology: Si
Unit Weight: 500 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 36 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 100 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 16 ns
Typical Turn-Off Delay Time: 19 ns
Id - Continuous Drain Current: 170 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 150 S
Rds On - Drain-Source Resistance: 3.2 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.35 V
