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Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: Through Hole
Qg - Gate Charge: 125 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 137 W
Vgs - Gate-Source Voltage: - 16 V, + 5 V
Id - Continuous Drain Current: 80 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4.1 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
