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Width: 5.15 mm
Height: 1.27 mm
Length: 5.9 mm
Technology: Si
Unit Weight: 99.100 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 39 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 54 W
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 8.2 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1.7 V
