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Infineon IFS150B17N3E4P_B11 IGBT Silicon Modules 1700 V, 150 A sixpack IGBT module

Name: Infineon IFS150B17N3E4P_B11 IGBT Silicon Modules 1700 V, 150 A sixpack IGBT module
Brand: Infineon

ModelIFS150B17N3E4P_B11

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Technology: Si

Configuration: 6-Pack

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 150 A