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Technology: Si
Configuration: Half Bridge
Pd - Power Dissipation: 1.667 kW
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 750 V
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 300 A
