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Technology: SiC
Unit Weight: 1.450 g
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 282 W
Id - Continuous Drain Current: 45 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 50 mO
Vds - Drain-Source Breakdown Voltage: 1.2 kV
