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Fall Time: 20 ns
Rise Time: 37 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 180 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 389 W
Vgs - Gate-Source Voltage: - 5 V, + 15 V
Typical Turn-On Delay Time: 47 ns
Typical Turn-Off Delay Time: 43 ns
Id - Continuous Drain Current: 100 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 29.2 S
Rds On - Drain-Source Resistance: 20 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.7 V
