Vishay General Semiconductor IRF9610PBF MOSFETs TO220 200V 1.8A P-CH MOSFET

Width: 4.7 mm

Height: 15.49 mm

Length: 10.41 mm

Fall Time: 8 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 20 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 1.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V