Fairchild KSD1691GSTU BJTs - Bipolar Transistors 60V 5A NPN BJT

Width: 3.25 mm

Height: 11 mm

Length: 8 mm

Technology: Si

Unit Weight: 761 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.3 W

DC Current Gain hFE Max: 200 at 2 A, 1 V

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at 2 A, 1 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 100 mV