Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 3.93 mm
Height: 4.7 mm
Length: 4.7 mm
Technology: Si
Unit Weight: 179 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 250 mW
DC Current Gain hFE Max: 700
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 150 mA
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 150 mV
