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Width: 3.93 mm
Height: 4.7 mm
Length: 4.7 mm
Technology: Si
Unit Weight: 240 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 1200
Gain Bandwidth Product fT: 110 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 50 mA
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 70 mV
