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Technology: Si
Unit Weight: 201 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 625 mW
Gate-Source Cutoff Voltage: - 5 V
Drain-Source Current at Vgs=0: 5 mA
Rds On - Drain-Source Resistance: 50 Ohms
Vgs - Gate-Source Breakdown Voltage: - 35 V
