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Technology: Si
Unit Weight: 7 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 60 W
Gain Bandwidth Product fT: 15 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 1.7 kV
Maximum DC Collector Current: 12 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 8
Collector- Emitter Voltage VCEO Max: 800 V
Collector-Emitter Saturation Voltage: 250 mV
