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Width: 2.5 mm
Height: 6.3 mm
Length: 6.8 mm
Fall Time: 11.9 ns
Rise Time: 5.3 ns
Technology: Si
Unit Weight: 340 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 13 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 52 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10.9 ns
Typical Turn-Off Delay Time: 33.6 ns
Id - Continuous Drain Current: 4.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4.6 S
Rds On - Drain-Source Resistance: 900 mOhms
Vds - Drain-Source Breakdown Voltage: 675 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
