Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 8 ns
Rise Time: 2.5 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 440 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 2.7 ns
Typical Turn-Off Delay Time: 13 ns
Id - Continuous Drain Current: 300 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 80 S
Rds On - Drain-Source Resistance: 3 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
