Diodes Incorporated ZXTP25100CFHQTA BJTs - Bipolar Transistors SS Low Sat Transist

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 730 mW

DC Current Gain hFE Max: 500 at - 10 mA, -2 V

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 115 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at - 10 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 150 mV