Diodes Incorporated ZXTP19100CZTA BJTs - Bipolar Transistors PNP 100V 2A

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 4.46 W

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 142 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 110 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 100 mA, 2 V, 70 at 1 A, 2 V, 20 at 2 A, 2 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 220 mV