Diodes Incorporated ZXTN25060BZQTA BJTs - Bipolar Transistors 60V NPN Med PWR 5A BJT 70mV 1A

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.8 W

Gain Bandwidth Product fT: 185 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 240 mV