Diodes Incorporated ZXTN23015CFHTA BJTs - Bipolar Transistors NPN Medium Power

Width: 1.4 mm

Height: 1 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 160 at 10 mA, 2 V

Gain Bandwidth Product fT: 235 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 160 at 10 mA, 2 V, 200 at 500 mA, 2 V, 190 at 3 A, 2 V, 150 at 6 A, 2 V

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 90 mV