Diodes Incorporated ZXTN08400BNS-7 BJTs - Bipolar Transistors Pwr Mid Perf Transistor PowerDI3333-8 T&R 2K

Technology: Si

Unit Weight: 30 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 830 mW

DC Current Gain hFE Max: 300 at 50 mA, 5 V

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 450 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100 at 50 mA, 5 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 125 mV