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Width: 1.75 mm
Height: 1.3 mm
Length: 3 mm
Technology: Si
Unit Weight: 6.500 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 1.7 W
DC Current Gain hFE Max: 200 at 10 mA, 2 V
Gain Bandwidth Product fT: 180 MHz, 220 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 15 V, 12 V
Maximum DC Collector Current: 1.5 A, 1.25 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 15 V, 12 V
Collector-Emitter Saturation Voltage: 205 mV, 185 mV
