Diodes Incorporated ZXTC6717MCTA BJTs - Bipolar Transistors Dual 15V NPN 12V PNP Bvceo 15V IC 4.5A

Technology: Si

Unit Weight: 13 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 120 MHz, 110 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 40 V, 20 V

Continuous Collector Current: - 4 A, 4.5 A

Maximum DC Collector Current: 4.5 A, 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max: 15 V, 12 V

Collector-Emitter Saturation Voltage: 200 mV, 240 mV