Diodes Incorporated ZXTC4591AMCTA BJTs - Bipolar Transistors 40V High Perf Trans Ic = 3A 500mV 1A

Technology: Si

Unit Weight: 13 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 900 at 500 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 1.5 A, 2 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 500 mA, 5 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 500 mV