Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 2.41 mm
Height: 4.01 mm
Length: 4.77 mm
Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 50 at 100 mA, 5 V
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 300 V
Continuous Collector Current: - 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 50 at 100 mA, 5 V, 40 at 10 mA, 5 V
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 500 mV
