Diodes Incorporated ZTD09N50DE6QTA BJTs - Bipolar Transistors 50V Dual NPN Low Sat 1A 7V Vebo

Technology: Si

Unit Weight: 15 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 700 mW

Gain Bandwidth Product fT: 215 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 160 mV