Diodes Incorporated ZHB6792TA BJTs - Bipolar Transistors H-Bridge-70V

Width: 3.7 mm

Height: 1.6 mm

Length: 6.7 mm

Technology: Si

REACH - SVHC: Details

Configuration: Quad

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 500

Gain Bandwidth Product fT: 100 MHz, 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 70 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 500 at 100 mA, 2 V at NPN, 400 at 500 mA, 2 V at NPN, 150 at 1 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 250 at 500 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP

Collector- Emitter Voltage VCEO Max: 70 V

Collector-Emitter Saturation Voltage: 500 mV