Diodes Incorporated ZHB6718TA BJTs - Bipolar Transistors H-Bridge-20V

Width: 3.7 mm

Height: 1.6 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 1 g

REACH - SVHC: Details

Configuration: Quad

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 140 MHz, 180 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 2.5 A

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V at NPN, 300 at 100 mA, 2 V at NPN, 200 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 150 at 2 A, 2 V at PNP, 35 at 4 A, 2 V at PNP

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 130 mV, 190 mV