Diodes Incorporated FMMT625TA BJTs - Bipolar Transistors NPN SuperSOT

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 200 at 10 mA, 10 V

Gain Bandwidth Product fT: 135 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 10 V, 300 at 200 mA, 10 V, 30 at 1 A, 10 V

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 180 mV