Diodes Incorporated FMMT493QTA BJTs - Bipolar Transistors 100V NPN Med PWR 1A Ic 2A Icm 500mW

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 600 mV