Diodes Incorporated FCX658ATA BJTs - Bipolar Transistors NPN 400V

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 200 mV