Diodes Incorporated FCX619QTA BJTs - Bipolar Transistors Pwr Low Sat Transistor SOT89 T&R 1K

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

Gain Bandwidth Product fT: 165 MHz

Emitter- Base Voltage VEBO: 8.3 V

Collector- Base Voltage VCBO: 190 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 240 mV