Diodes Incorporated FCX596TA BJTs - Bipolar Transistors PNP Medium Power

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 100 at 1 mA, 10 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 220 V

Continuous Collector Current: - 300 mA

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 35 at 400 mA, 10 V

Collector- Emitter Voltage VCEO Max: 200 V

Collector-Emitter Saturation Voltage: 350 mV