Diodes Incorporated DXTN26070CY-13 BJTs - Bipolar Transistors 70V NPN Transistor 2A Bipolar BJT

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 500 at 100 mA, 2 V

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 70 V

Collector-Emitter Saturation Voltage: 150 mV