Diodes Incorporated DSS45160FDB-7 BJTs - Bipolar Transistors SS Low Sat Transistor

Technology: Si

Unit Weight: 76 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 405 mW

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 1 A, 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 170 at - 2 V at - 100 mA at - 2 V, 290 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 185 mV, 550 mV