Diodes Incorporated DPLS160V-7 BJTs - Bipolar Transistors PNP .3W

Width: 1.2 mm

Height: 0.6 mm

Length: 1.6 mm

Technology: Si

Unit Weight: 6 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 250 at 1 mA, 5 V

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 330 mV