Diodes Incorporated DP0150BLP4-7B BJTs - Bipolar Transistors General Purpose Tran X1-DFN1006-3,10K

Technology: Si

Unit Weight: 8 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 450 mW

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at - 2 mA, - 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV