Diodes Incorporated DP0150BLP4-7 BJTs - Bipolar Transistors PNP 50V 0.1A 3-PIN SMT

Width: 0.6 mm

Height: 0.35 mm

Length: 1 mm

Technology: Si

Unit Weight: 2.400 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 200 at 2 mA, 6 V

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 150 mV