Diodes Incorporated DMP21D0UFB4-7B MOSFETs 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A

Fall Time: 18.5 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 1 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 1.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 990 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 7.1 ns

Typical Turn-Off Delay Time: 31.7 ns

Id - Continuous Drain Current: 770 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 50 mS

Rds On - Drain-Source Resistance: 495 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 700 mV