Diodes Incorporated DMN3150LW-7 MOSFET Small Signals 0.35W 28V 1.6A

Width: 1.3 mm

Height: 1 mm

Length: 2.15 mm

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.4 S

Rds On - Drain-Source Resistance: 88 mOhms

Vds - Drain-Source Breakdown Voltage: 28 V

Vgs th - Gate-Source Threshold Voltage: 620 mV