Diodes Incorporated DMN30H4D0L-13 MOSFETs N-Ch Enh FET 300V 20Vgs 0.25A 0.31W

Fall Time: 17.5 ns

Rise Time: 4.7 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 7.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 630 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.9 ns

Typical Turn-Off Delay Time: 25.8 ns

Id - Continuous Drain Current: 550 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4 Ohms

Vds - Drain-Source Breakdown Voltage: 300 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V