Diodes Incorporated DMN26D0UDJ-7 Dual N-Channel Enhancement Mode MOSFET DUAL N-CH 20V 0.23A

Fall Time: 15.2 ns

Rise Time: 7.9 ns

Technology: Si

Unit Weight: 270 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3.8 ns

Typical Turn-Off Delay Time: 13.4 ns

Id - Continuous Drain Current: 240 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 180 mS

Rds On - Drain-Source Resistance: 3 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV