Diodes Incorporated DMN2310UTQ-7 MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 3K

Fall Time: 180 ns

Rise Time: 138 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 700 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 490 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 154 ns

Id - Continuous Drain Current: 1.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 200 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV