Diodes Incorporated DMN2036UCB4-7 MOSFETs MOSFET BVDSS: 8V-24V

Fall Time: 572 ns

Rise Time: 278 ns

Technology: Si

Unit Weight: 2.600 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 12.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, NPN

Pd - Power Dissipation: 1.45 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 183 ns

Typical Turn-Off Delay Time: 738 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 36 mOhms

Vds - Drain-Source Breakdown Voltage: 24 V

Vgs th - Gate-Source Threshold Voltage: 500 mV