Diodes Incorporated DMN2004VK-7B MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 8.0K

Fall Time: 36.1 ns

Rise Time: 13.3 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 53.5 ns

Id - Continuous Drain Current: 540 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 550 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V