Diodes Incorporated DMN1260UFA-7B MOSFETs 12V N-Ch Enh FET 8 VGS 60pF 0.92nC

Fall Time: 59.2 ns

Rise Time: 18.8 ns

Technology: Si

Unit Weight: 1 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 960 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 7.4 ns

Typical Turn-Off Delay Time: 106.5 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 366 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V