Diodes Incorporated DMN1003UCA6-7 MOSFETs MOSFETBVDSS: 8V-24V

Fall Time: 6208 ns, 6208 ns

Rise Time: 1694 ns, 1694 ns

Technology: Si

Unit Weight: 2.600 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 56.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.67 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 603 ns, 603 ns

Typical Turn-Off Delay Time: 47479 ns, 4747 ns

Id - Continuous Drain Current: 23.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.3 mOhms, 2.3 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 500 mV